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參數(shù)資料
| 型號(hào)： | STM4973 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | Dual P -Channel E nhancement Mode F ield E ffect Transistor |
| 中文描述： | 雙P溝道位置nhancement F型爾德首頁(yè)ffect晶體管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 890K |
| 代理商： | STM4973 |
STM4973
Parameter
Symbol
Condition
Min Typ
Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =-1.7A
-0.77
-1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t<= 10sec.
b.Pulse Test:Pulse Width<= 300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
-V
DS
, Drain-to Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
C
-
D
,
-
D
,
0 5 10 15 20 25 30
Ciss
Coss
1800
1500
1200
900
600
300
0
25 C
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
Tj=125 C
3
Figure 4. On-Resistance Variation with
Temperature
O
R
,
1.8
1.6
1.2
0.8
1.4
1.0
0.6
-50
0
50
100
150
V
GS
=-10V
I
D
=-6A
Tj, Junction Temperature ( C)
20
15
12
8
4
0
0
3
6
9
12
15
18
Crss
-V
GS
=3V
-V
GS
=10,9,8,7,6,5,4V
-55 C
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