參數(shù)資料
型號: STM32F103CBT6
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PQFP48
封裝: 7 X 7 MM, 0.50 MM PITCH, LQFP-48
文件頁數(shù): 47/79頁
文件大?。?/td> 1124K
代理商: STM32F103CBT6
STM32F103xx
Electrical characteristics
5.3.12
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 33 are derived from tests
performed under the conditions summarized in Table 7. All I/Os are CMOS and TTL
compliant.
All unused pins must be configured in either of the three modes below:
as outputs with an external pull-up or pull-down resistor and held at a fixed voltage (see
as push-pull outputs with 0 written into the data register
or as analog inputs
Table 33.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage(1)
1.
Values based on characterization results, and not tested in production.
TTL ports
–0.5
0.8
V
VIH
Standard IO input high level
voltage(1)
2VDD+0.5
IO FT(2) input high level
voltage(1)
2.
FT = Five-volt tolerant.
25.5V
VIL
Input low level voltage(1)
CMOS ports
–0.5
0.35 VDD
V
VIH
Input high level voltage(1)
0.65 VDD
VDD+0.5
Vhys
Standard IO Schmitt trigger
voltage hysteresis(3)
3.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
200
mV
IO FT Schmitt trigger voltage
hysteresis(3)
5% VDD
(4)
4.
With a minimum of 100 mV.
mV
Ilkg
Input leakage current (5)
5.
Leakage could be higher than max. if negative current is injected on adjacent pins.
VSS VIN VDD
Standard I/Os
±1
A
VIN= 5 V
I/O FT
3
RPU
Weak pull-up equivalent
resistor(6)
6.
Pull-up and pull-down resistors are designed with a true resistance in series with a switchable
PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order)
.
VIN = VSS
30
40
50
k
RPD
Weak pull-down equivalent
resistor(6)
VIN = VDD
30
40
50
k
CIO
I/O pin capacitance
5
pF
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