
Electrical characteristics
STM32F102x4, STM32F102x6
Figure 18.
Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in
Table 23 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 8. High-speed internal (HSI) RC oscillator
low-speed internal (LSI) RC oscillator
ai14978
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F102xx
32.768 KH z
resonator
RESONATORWITH
INTEGRATEDCAPACITORS
Bias
controlled
gain
CL2
Table 23.
HSI oscillator characteristics(1)(2)
1.
Guaranteed by design, not tested in production.
2.
VDD = 3.3 V, TA = –40 to 85 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI Accuracy of HSI oscillator
TA = –40 to 85 °C
±1
±3%
TA = –10 to 85 °C
±1
±2.5
%
TA = 0 to 70 °C
±1
±2.2
%
TA = 25 °C
±1
±2%
tsu(HSI)
HSI oscillator startup time
1
2
s
IDD(HSI) HSI oscillator power consumption
80
100
A
Table 24.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = 40 to 85 °C unless otherwise specified.
Symbol
Parameter
Min(2)
2.
Based on characterization, not tested in production.
Typ
Max
Unit
fLSI
Frequency
30
40
60
kHz
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
s
LSI oscillator power consumption
0.65
1.2
A