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參數(shù)資料
| 型號： | STL51007X |
| 廠商： | SIEMENS AG |
| 英文描述： | 1300 nm Laser in Receptacle Package, Low Power |
| 中文描述： | 1300 nm激光在插孔封裝，低功耗 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 80K |
| 代理商： | STL51007X |
STL 51007X
Semiconductor Group
3
Laser Diode
Radiant Power in Singlemode Fiber
Relative Radiant Power
Φ
e
=
f
(
λ
)
0
100
200
300
400
0
5
10
15
20
Forward Current in mA
O
0
1306
10
20
30
40
50
60
70
80
90
100
1308
1310
1312
1314
Wavelength in nm
R
Laser Forward Current
I
F
=
f
(
V
F
)
Monitor Diode Dark Current
I
R
=
f
(
T
A
)
Φ
port
= 0,
V
R
= 5 V
0
10
20
30
40
50
60
70
80
90
100
0
0.4
0.8
1.2
1.6
Forward Voltage in V
F
0.01
0.1
1
10
100
1000
-50
0
50
100
Temperature in °C
D
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STL51N3LLH5 | 功能描述:MOSFET N-Ch 30V 0.0105 Ohm 51A STripFET V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STL52N25M5 | 功能描述:MOSFET N-CH 250V 28A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STL55NH3LL | 功能描述:MOSFET N-channel 30 V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STL56N3LLH5 | 功能描述:MOSFET N-Channel 30V 15A 0.0076 Ohm STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STL57N65M5 | 功能描述:MOSFET N-Ch 650V 0.061 Ohm 40 A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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