參數(shù)資料
型號(hào): STK596EF
廠商: AUK Corp
英文描述: N-Channel Junction FET
中文描述: N溝道結(jié)場效應(yīng)管
文件頁數(shù): 2/5頁
文件大?。?/td> 343K
代理商: STK596EF
KST-3063-001
2
STK596UF
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Gate-Drain voltage
V
GDO
Gate Current
I
G
Drain Current
I
D
Power dissipation
P
D
Junction Temperature
T
J
Storage Temperature range
T
stg
Rating
-20
10
1
100
150
-55~150
Unit
V
mA
mA
mW
°
C
°
C
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Gate-drain breakdown voltage
V
(BR)GDO
I
G
=-100
μ
A
-20
V
Cutoff voltage
V
GS(off)
V
DS
=5V, I
D
=1
-0.6
-1.5
V
Zero Voltage Drain current
I
DSS
y
fs
V
DS
=5V, V
GS
=0
100
800
μ
A
Forward transfer admittance
V
DS
=5V, V
GS
=0, f=1KHz
0.4
1.2
mS
Input capacitance
Ciss
V
DS
=5V, V
GS
=0, f=1MHz
3.5
pF
Reverse Transfer capacitance
Crss
V
DS
=5V, V
GS
=0, f=1MHz
0.65
pF
Output Noise Voltage
V
NO
V
IN
=
, A CURVE
-110
dB
I
DSS
Classification
Classification
A
B
C
D
E
I
DSS
[
]
100 ~ 170
150 ~ 240
210 ~ 350
320 ~ 480
440 ~ 800
Noise Voltage Test Circuit
VTVM
V
CC
=+4.5
V
Cin=15p
1k
Ω
JIS A
V
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