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參數(shù)資料
| 型號(hào)： | STK2N80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | STK2N80 |
STK2N80
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 5
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INPUT CAPACITANCE
I
LOW GATE CHARGE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 7
I
D
STK2N80
800 V
2.1 A
12
3
SOT-82
SOT-194
(option)
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
DGR
800
±
20
2.1
V
V
GS
V
I
D
A
I
D
1.3
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
9.6
A
70
W
Derating Factor
0.56
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
1/10
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