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    參數(shù)資料
    型號: STK25C48-W25I
    廠商: Electronic Theatre Controls, Inc.
    英文描述: 2K X 8 AUTOSTORE NVSRAM
    中文描述: 2K × 8自動存儲非易失性SRAM
    文件頁數(shù): 1/8頁
    文件大?。?/td> 129K
    代理商: STK25C48-W25I
    August 1999
    6-1
    PIN CONFIGURATIONS
    PIN NAMES
    A
    0
    - A
    16
    Address Inputs
    W
    Write Enable
    DQ
    0
    - DQ
    7
    Data In/Out
    E
    Chip Enable
    G
    Output Enable
    V
    CC
    Power (+ 5V)
    V
    SS
    Ground
    A
    13
    A
    8
    A
    9
    A
    11
    G
    NC
    A
    16
    A
    14
    A
    12
    A
    7
    A
    6
    A
    5
    A
    4
    A
    3
    A
    2
    A
    1
    A
    0
    DQ
    0
    DQ
    1
    DQ
    2
    V
    SS
    NC
    W
    A
    10
    E
    DQ
    7
    DQ
    6
    DQ
    5
    DQ
    4
    DQ
    3
    1
    2
    3
    4
    5
    6
    7
    8
    9
    10
    11
    12
    13
    14
    15
    16
    32
    31
    30
    29
    28
    27
    26
    25
    24
    23
    22
    21
    20
    19
    18
    17
    V
    CC
    A
    15
    STK25CA8
    128K x 8 AutoStore nvSRAM
    QuantumTrap CMOS
    Nonvolatile Static RAM Module
    FEATURES
    Nonvolatile Storage without Battery Problems
    Directly Replaces 128K x 8 Static RAM, Battery-
    Backed RAM or EEPROM
    35ns and 45ns Access Times
    STOREto EEPROM Initiated by AutoStore
    on Power Down
    RECALLto SRAM on Power Restore
    22mA I
    CC
    at 200ns Cycle Time
    Unlimited READ, WRITE and RECALLCycles
    1,000,000 STORECycles to EEPROM
    100-Year Data Retention Over Full Commercial
    Temperature Range
    Commercial and Industrial Temperatures
    32-Pin 600 mil Dual In-Line Module
    DESCRIPTION
    The Simtek STK25CA8 is a fast static
    RAM
    with a
    nonvolatile, electrically erasable
    incorporated in each static memory cell. The
    SRAM
    can be read and written an unlimited number of
    times, while independent nonvolatile data resides in
    the
    EEPROM
    . Data transfers from the
    SRAM
    to the
    EEPROM
    (the
    STORE
    operation) can take place auto-
    matically on power down using charge stored in sys-
    tem capacitance. Transfers from the
    EEPROM
    to the
    SRAM
    (the
    RECALL
    operation) take place automati-
    cally on restoration of power.
    PROM
    element
    BLOCK DIAGRAM
    A
    6
    A
    7
    A
    8
    A
    2
    COLUMN I/O
    COLUMN DEC
    STATIC RAM
    ARRAY
    512 x 512
    R
    I
    EEPROM ARRAY
    512 x 512
    STORE/
    RECALL
    CONTROL
    POWER
    CONTROL
    A
    11
    A
    12
    A
    13
    A
    14
    DQ
    0
    DQ
    1
    DQ
    2
    DQ
    3
    DQ
    4
    DQ
    5
    DQ
    6
    DQ
    7
    V
    CC
    G
    E
    W
    A
    9
    A
    10
    A
    3
    A
    0
    A
    1
    A
    4
    A
    5
    A
    15
    A
    16
    MODULE
    DECODER
    STORE
    RECALL
    32 - 600 mil
    Dual In-Line
    Module
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