參數(shù)資料
型號(hào)： STK16C88-W25I
英文描述： SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):55A; Peak Non Repetitive Surge Current, Itsm:650A; Gate Trigger Current Max, Igt:40uA
中文描述： NOVRAM | 32KX8 |的CMOS |雙酯| 28腳|塑料
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 95K
代理商： STK16C88-W25I
July 1999
4-73
STK16C68
8K x 8
AutoStorePlus
nvSRAM
QuantumTrap
CMOS
Nonvolatile Static RAM
FEATURES
Transparent Data Save on Power Down
Internal Capacitor Guarantees
AutoStore
Regardless of Power-Down Slew Rate
Nonvolatile Storage without Battery Problems
Directly Replaces 8K x 8 Static RAM, Battery-
Backed RAM or EEPROM
20ns, 25ns, 35ns and 45ns Access Times
STORE
to EEPROM Initiated by Software or
AutoStorePlus
on Power Down
RECALL
to SRAM Initiated by Software or
Power Restore
10mA Typical I
CC
at 200ns Cycle Time
Unlimited READ, WRITE and
RECALL
Cycles
1,000,000
STORE
Cycles to EEPROM
100-Year Data Retention over Full Industrial
Temperature Range
No Data Loss from Undershoot
Commercial and Industrial Temperatures
28-Pin 600 mil PDIP and 350 mil SOIC Packages
DESCRIPTION
The STK16C68 is a fast
SRAM
with a nonvolatile
EEPROM
element incorporated in each static memory
cell. The
SRAM
can be read and written an unlimited
number of times, while independent nonvolatile data
resides in
EEPROM
. Data transfers from the
SRAM
to
the
EEPROM
(the
STORE
operation) can take place
automatically on power down. An internal capacitor
guarantees the
STORE
operation regardless of power-
down slew rate. Transfers from the
EEPROM
to the
SRAM
(the
RECALL
operation) take place automatically
on restoration of power. Initiation of
STORE
and
RECALL
cycles can also be controlled by entering con-
trol sequences on the
SRAM
inputs. The STK16C68 is
pin-compatible with 8k x 8
SRAM
s and battery-backed
SRAM
s, allowing direct substitution while enhancing
performance. The STK12C68, which uses an external
capacitor, and the STK15C68, which uses charge
stored in system capacitance, are alternatives for sys-
tems needing
AutoStore
operation.
BLOCK DIAGRAM
COLUMN I/O
COLUMN DEC
STATIC RAM
ARRAY
128 x 512
R
I
EEPROM ARRAY
128 x 512
STORE/
RECALL
CONTROL
STORE
RECALL
POWER
CONTROL
A
5
A
6
A
7
A
9
A
11
A
12
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
SOFTWARE
DETECT
V
CC
A
0
-
A
12
G
E
W
A
8
A
10
A
3
A
2
A
0
A
1
A
4
INTERNAL
CAPACITOR
PIN NAMES
A
0
- A
12
Address Inputs
W
Write Enable
DQ
0
- DQ
7
Data In/Out
E
Chip Enable
G
Output Enable
V
CC
Power (+ 5V)
V
SS
Ground
PIN CONFIGURATIONS
NC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
V
CC
W
NC
A
8
A
9
A
11
G
A
10
E
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28 - 600 PDIP
28 - 350 SOIC*
*see order info
相關(guān)PDF資料
PDF描述
STK16C88-W35 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
STK16C88-W35I SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA
STK16C88-W45 DIODE TVS 13V 500W AXL UNI 5%
STK16C88-W45I DIODE TVS 16V 500W UNI-DIR
STK16N10L DIODE TVS 33V 500W BI-DIR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STK16C88-WF25 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
STK16C88-WF25I 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
STK16C88-WF25ITR 制造商:Cypress Semiconductor 功能描述:STK16C88-WF25ITR - Tape and Reel
STK16C88-WF25TR 制造商:Cypress Semiconductor 功能描述:STK16C88-WF25TR - Tape and Reel
STK16C88-WF45 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStorePlus RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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