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參數(shù)資料
| 型號： | STK15C88-P45 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM |
| 中文描述： | 32K的× 8自動存儲非易失高性能CMOS非易失性靜態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 75K |
| 代理商： | STK15C88-P45 |
STK15C88
August 1998
5-42
Internally,
RECALL
is a two step procedure. First,
the
SRAM
data is cleared and second, the nonvola-
tile information is transferred into the
SRAM
cells.
After the t
RECALL
cycle time the
SRAM
will once again
be ready for
READ
and
WRITE
operations. The
RECALL
operation in no way alters the data in the
EEPROM
cells. The nonvolatile data can be recalled
an unlimited number of times.
AutoStore
TM
OPERATION
The STK15C88 uses the intrinsic system capaci-
tance to perform an automatic store on power
down. As long as the system power supply takes at
least t
STORE
to decay from V
SWITCH
down to 3.6V the
STK15C88 will safely and automatically store the
SRAM
data in
EEPROM
on power-down.
In order to prevent unneeded
STORE
operations,
automatic
STORE
will be ignored unless at least
one
WRITE
operation has taken place since the
most recent
STORE
or
RECALL
cycle. Software initi-
ated
STORE
cycles are performed regardless of
whether a
WRITE
operation has taken place.
POWER UP RECALL
During power up, or after any low power condition
(V
CC
< V
RESET
) an internal recall request will be
latched. When V
CC
once again exceeds the sense
voltage of V
SWITCH
, a
RECALL
cycle will automatically
be initiated and will take t
RESTORE
to complete.
HARDWARE PROTECT
The STK15C88 offers hardware protection against
inadvertent
STORE
operation during low voltage
conditions. When V
CC
< V
SWITCH
all Software
STORE
operations will be inhibited.
LOW AVERAGE ACTIVE POWER
The STK15C88 draws significantly less current
when it is cycled at times longer than 30ns. Figure
2 below, shows the relationship between I
CC
and
READ
cycle time. Worst case current consumption
is shown for both CMOS and TTL input levels (com-
mercial temperature range, V
CC
= 5.5V, 100% duty
cycle on chip enable). Figure 3shows the same
relationship for
WRITE
cycles. If the chip enable
duty cycle is less than 100%, only standby current
is drawn when the chip is disabled. The overall
average current drawn by the STK15C88 depends
on the following items: 1) CMOS vs. TTL input lev-
els; 2) the duty cycle of chip enable; 3) the overall
cycle rate for accesses; 4) the ratio of
READ
’s to
WRITE
’s; 5) the operating temperature; 6) the V
CC
level and; 7) I/O loading.
Fig 3: Icc (Max) Writes
Fig 2: Icc (max) Reads
50
CMOS
TTL
60
20
0
A
Cycle Time (ns)
80
TTL
100
CMOS
80
0
40
200
100
150
50
150
100
100
40
20
60
200
Cycle Time (ns)
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK15C88-SF25 | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK15C88-SF25I | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK15C88-SF25ITR | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK15C88-SF25TR | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK15C88-SF45 | 功能描述:NVRAM 32Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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