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參數(shù)資料
| 型號： | STK14C88-3WF35I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| 中文描述： | 32K的× 8自動存儲⑩非易失QuantumTrap的CMOS非易失StaticRAM |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 371K |
| 代理商： | STK14C88-3WF35I |
STK14C88-3
November 2003
9
Document Control # ML0015 rev 0.3
SOFTWARE NONVOLATILE
RECALL
A software
RECALL
cycle is initiated with a sequence
of
READ
operations in a manner similar to the soft-
ware
STORE
initiation. To initiate the
RECALL
cycle,
the following sequence of
E
controlled
READ
opera-
tions must be performed:
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
0E38 (hex)
31C7 (hex)
03E0 (hex)
3C1F (hex)
303F (hex)
0C63 (hex)
Valid READ
Valid READ
Valid READ
Valid READ
Valid READ
Initiate
RECALL
cycle
Internally,
RECALL
is a two-step procedure. First, the
SRAM
data is cleared, and second, the nonvolatile
information is transferred into the
SRAM
cells. After
the t
RECALL
cycle time the
SRAM
will once again be
ready for
READ
and
WRITE
operations. The
RECALL
operation in no way alters the data in the nonvolatile
elements. The nonvolatile data can be recalled an
unlimited number of times.
AutoStore
OPERATION
During
STK14C88-3 will draw current from V
CCX
to charge a
capacitor connected to the V
CAP
pin. This stored
charge will be used by the chip to perform a single
STORE
operation. After power up, when the voltage
on the V
CAP
pin drops below V
SWITCH
, the part will
automatically disconnect the V
CAP
pin from V
CCX
and
initiate a
STORE
operation.
normal
AutoStore
operation,
the
Figure 2 shows the proper connection of capacitors
for automatic store operation. A charge storage
capacitor having a capacity of between 68
μ
F and
220
μ
F (
±
20%) rated at 4.7V should be provided.
In order to prevent unneeded
STORE
operations,
automatic
STORE
s as well as those initiated by
externally driving HSB low, will be ignored unless at
least one
WRITE
operation has taken place since the
most recent
STORE
or
RECALL
cycle. Software-
initiated
STORE
cycles are performed regardless of
whether a
WRITE
operation has taken place. An
optional pull-up resistor is shown connected to HSB.
This can be used to signal the system that the
AutoStore
cycle is in progress.
Figure 2:
AutoStore
Mode
*If HSB is not used, it should be left unconnected.
If the power supply drops faster than 20
μ
s/volt
before V
CCX
reaches V
SWITCH
, then a 1 ohm resistor
should be inserted between V
CCX
and the system
supply to avoid a momentary excess of current
between Vccx and Vcap.
HSB OPERATION
The STK14C88-3 provides the HSB pin for control-
ling and acknowledging the
STORE
operations. The
HSB pin can be used to request a hardware
STORE
cycle. When the HSB pin is driven low, the
STK14C88-3 will conditionally initiate a
STORE
oper-
ation after t
DELAY
; an actual
STORE
cycle will only
begin if a
WRITE
to the
SRAM
took place since the
last
STORE
or
RECALL
cycle. The HSB pin also acts
as an open drain driver that is internally driven low
to indicate a busy condition while the
STORE
(initi-
ated by any means) is in progress.
SRAM READ
and
WRITE
operations that are in
progress when HSB is driven low by any means are
given time to complete before the
STORE
operation
is initiated. After HSB goes low, the STK14C88-3
will continue
SRAM
operations for t
DELAY
. During t
DELAY
,
multiple
SRAM
READ
operations may take place. If a
WRITE
is in progress when HSB is pulled low it will
be allowed a time, t
DELAY
, to complete. However, any
SRAM
WRITE
cycles requested after HSB goes low
will be inhibited until HSB returns high.
The HSB pin can be used to synchronize multiple
STK14C88-3s while using a single larger capacitor.
1
16
32
31
30
17
6
μ
F
6
0
μ
F
B
+
1
10k
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|---|---|
| STK14C88-3N45 | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-3N45I | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-3RF35 | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-3RF35I | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
| STK14C88-3RF45 | 32K x 8 AutoStore⑩ nvSRAM QuantumTrap CMOS Nonvolatile StaticRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STK14C88-3WF35ITR | 制造商:Cypress Semiconductor 功能描述:STK14C88-3WF35ITR - Tape and Reel |
| STK14C88-3WF35TR | 制造商:Cypress Semiconductor 功能描述:STK14C88-3WF35TR - Tape and Reel |
| STK14C88-3WF45 | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK14C88-3WF45I | 功能描述:NVRAM 32Kbx8 3.0-3.6V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| STK14C88-3WF45ITR | 制造商:Cypress Semiconductor 功能描述:STK14C88-3WF45ITR - Tape and Reel |
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