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參數(shù)資料
| 型號： | STK13003 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 217K |
| 代理商： | STK13003 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
89
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 700V
V
CE
= 700V T
j
= 125
o
C
1
5
mA
mA
BV
EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
9
18
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
L = 25mH
400
V
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.25 A
I
C
= 1.5 A I
B
= 0.5 A
0.5
1
3
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.25 A
1
1.2
V
V
h
FE
DC Current Gain
I
C
= 0.5 A V
CE
= 2 V
Group A
Group B
I
C
= 1 A V
CE
= 2 V
8
15
5
20
35
25
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= 1 A V
CC
= 125 V
I
B1
= 0.2 A I
B2
= -0.2 A
T
p
= 25
μ
s
I
C
= 1 A I
B1
= 0.2 A
V
BE
= -5 V L = 50 mH
V
clamp
= 300 V
1
4
0.7
μ
s
μ
s
μ
s
t
s
INDUCTIVE LOAD
Storage Time
0.8
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
STK13003
2/7
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