參數(shù)資料
型號: STK12C68-55M
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM
中文描述: 的CMOS非易失SRAM 8K的乘八自動存儲非易失靜態(tài)RAM
文件頁數(shù): 9/10頁
文件大?。?/td> 72K
代理商: STK12C68-55M
STK12C68-M
4-61
access cycle time is longer than 55ns. Figure 2 below
shows the relationship between I
CC
and access times
for
READ
cycles. All remaining inputs are assumed to
cycle, and current consumption is given for all inputs at
CMOS
or TTL levels. Figure 3shows the same relation-
ship for
WRITE
cycles. When E is
HIGH
, the chip
consumes only standby currents, and these plots do
not apply.
The cycle time used in Figure 2 corresponds to the
length of time from the later of the last address transi-
tion or E going
LOW
to the earlier of E going
HIGH
or the
next address transition. W is assumed to be
HIGH
,
while the state of G does not matter. Additional current
is consumed when the address lines change state
while E is asserted. The cycle time used in Figure 3
corresponds to the length of time from the later of W or
E going
LOW
to the earlier of W or E going
HIGH
.
The overall average current drawn by the part depends
on the following items: 1)
CMOS
or TTL input levels; 2)
the time during which the chip is disabled (E
HIGH
); 3)
the cycle time for accesses (E
LOW
); 4) the ratio of
reads to writes; 5) the operating temperature; 6) the
V
CC
level; and 7) output load.
WRITE
operation has taken place since the most recent
STORE
cycle. Note that if HSB is driven low via external
circuitry and no
WRITE
s have taken place, the part will
still be disabled until HSB is allowed to return
HIGH
.
Software initiated
STORE
cycles are performed regard-
less of whether or not a
WRITE
operation has taken
place.
PREVENTING AUTOMATIC STORES
The AutoStore function can be disabled on the fly by
holding HSB
HIGH
with a driver capable of sourcing
15mA at a VOH of at least 2.2V as it will have to
overpower the internal pull-down device that drives
HSB low for 50ns at the onset of an AutoStore.
When the STK12C68-M is connected for
AutoStoreoperation (system V
CC
connected to V
CCX
and a 100uF capacitor on V
CAP
) and V
CC
crosses
V
SWITCH
on the way down, the STK12C68 will attempt
to pull HSB
LOW
; if HSB doesn't actually get below V
IL
,
the part will stop trying to pull HSB
LOW
and abort the
AutoStoreattempt.
LOW AVERAGE ACTIVE POWER
The STK12C68-M has been designed to draw signifi-
cantly less power when E is
LOW
(chip enabled) but the
100
80
60
40
20
50
100
150
200
A
0
TTL
CMOS
Cycle Time (ns)
100
80
60
40
20
50
100
150
200
A
0
TTL
CMOS
Cycle Time (ns)
1
28
26
V
V
HSB
CAP
CCX
V
SS
14
0.1uF
100uF
+
Power
(optional)
nvSRAM
Note: Typical at 25
°
C
Figure 1
Schematic Diagram
Figure 2
I
CC
(Max) Reads
Figure 3
I
CC
(Max) Writes
相關PDF資料
PDF描述
STK12C68-5L40M Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 24pF; Working Voltage (Vdc)[max]: 2000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.126" x 0.063"; Container: Bulk; Features: High Voltage; Unmarked
STK12C68-M CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM
STK12C68-5K40M Ground Cord; Features:Tough vinyl cord and strain relief provide long life; 15' cord.; 3/8? stud (male) for mat conn..;#10 ring terminal for ground conn.; Terminal Type:Ring RoHS Compliant: NA
STK14C88-5C35M 32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
STK14C88-5C45M 32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
STK12C68-5C35M 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
STK12C68-5C55M 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
STK12C68-5K35M 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
STK12C68-5K55M 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
STK12C68-5L35M 功能描述:NVRAM 8Kbx8 4.5-5.5V AutoStore RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube