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參數(shù)資料
| 型號(hào)： | STK11C68-5W35 |
| 英文描述： | Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | STK11C68-5W35 |
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STK11C68-5W35I | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA |
| STK11C68-5W45 | NVRAM (EEPROM Based) |
| STK11C68-5W45I | Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA |
| STK11C68-C30 | Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STK11C68-C30I | Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STK11C68-5W35I | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C68-5W45 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C68-5W45I | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:NVRAM (EEPROM Based) |
| STK11C68-C20 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM |
| STK11C68-C20I | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM |
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