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參數(shù)資料
| 型號(hào)： | STGY40NC60V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
| 中文描述： | N溝道50A條- 600V的- Max247非?？霵owerMESH？？ IGBT的 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 303K |
| 代理商： | STGY40NC60V |
1/11
July 2004
STGY40NC60VD
N-CHANNEL 50A - 600V - Max247
Very Fast PowerMESH IGBT
Table 1: General Features
I
HIGH CURRENT CAPABILITY
I
HIGH FREQUENCY OPERATION UP TO
50 KHz
I
LOSSES INCLUDE DIODE RECOVERY
ENERGY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOWER C
RES
/ C
IES
RATIO
I
VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
I
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
APPLICATIONS
I
HIGH FREQUENCY INVERTERS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
I
UPS
I
MOTOR DRIVERS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25°C
I
C
@100°C
STGY40NC60VD
600 V
< 2.5 V
50 A
1
23
Max247
Weight: 4.96gr ± 0.01
Max Clip Pressure: 150 N/mm
2
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGY40NC60VD
GY40NC60VD
Max247
TUBE
Rev.8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGY40NC60VD | N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT |
| STH12NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STH33N20 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STH5NA100FI | N-Channel Enhancement Mode Power MOS Transistors(N溝道增強(qiáng)模式快速功率MOS晶體管) |
| STW5NA100 | N-Channel Enhancement Mode Power MOS Transistors(N溝道增強(qiáng)模式快速功率MOS晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGY40NC60VD | 功能描述:IGBT 晶體管 N Ch 600V 50A Max247 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGY50NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT |
| STGY50NB60HD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 50 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGY50NC60WD | 功能描述:IGBT 晶體管 600V 65A N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGY80H65DFB | 功能描述:IGBT 650V 120A 469W MAX247 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場(chǎng)截止 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:120A 脈沖電流 - 集電極 (Icm):240A 不同?Vge，Ic 時(shí)的?Vce（on）:2V @ 15V，80A 功率 - 最大值:469W 開(kāi)關(guān)能量:2.1mJ（開(kāi)），1.5mJ（關(guān)） 輸入類型:標(biāo)準(zhǔn) 柵極電荷:414nC 25°C 時(shí) Td（開(kāi)/關(guān)）值:84ns/280ns 測(cè)試條件:400V，80A，10 歐姆，15V 反向恢復(fù)時(shí)間（trr）:85ns 封裝/外殼:TO-247-3 安裝類型:通孔 供應(yīng)商器件封裝:MAX247? 標(biāo)準(zhǔn)包裝:30 |
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