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參數(shù)資料
| 型號： | STGW20NB60HD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT |
| 中文描述： | N溝道20A條- 600V到- 247 PowerMESH IGBT的 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 90K |
| 代理商： | STGW20NB60HD |
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STGW20NB60HD
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGW20NB60KD | N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH? IGBT |
| STGW20NB60H | N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT |
| STGW20NB60K | N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH⑩ IGBT |
| STGW30NB60HD | N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT |
| STGW50NB60H | N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGW20NB60K | 制造商:STMicroelectronics 功能描述:TRANS IGBT CHIP N-CH 600V 40A 3PIN TO-247 - Rail/Tube |
| STGW20NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 20 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20NC60V | 功能描述:IGBT 晶體管 N-Ch 600 Volt 30 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20NC60VD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 30 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20V60DF | 功能描述:IGBT 晶體管 600V 20A High Speed Trench Gate IGBT RoHS:否 制造商:STMicroelectronics 配置:Single 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:+/- 20 V 在25 C的連續(xù)集電極電流:40 A 柵極—射極漏泄電流:250 nA 功率耗散:167 W 最大工作溫度:+ 175 C 封裝 / 箱體:TO-247 封裝:Tube |
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