參數(shù)資料
型號(hào): STDD15-04W
廠商: STMICROELECTRONICS
元件分類: 射頻混頻器
英文描述: SILICON, MIXER DIODE
封裝: SOT-323, 3 PIN
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 42K
代理商: STDD15-04W
STDD15 series
3/6
1.E-01
1.E+00
1.E+01
1.E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VFM(V)
Tj=125°C
Tj=85°C
Tj=25°C
Tj=-40°C
IFM(mA)
Fig. 1:
Forward voltage drop versus forward
current (typical values).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0.0
2.5
5.0
7.5
10.0
12.5
15.0
VR(V)
Tj=125°C
Tj=85°C
Tj=25°C
IR(A)
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
1
10
100
1.0
10.0
100.0
IF(mA)
F=10kHz
Tj=25°C
RF( )
Fig. 3:
Differential forward resistance versus
forward current (typical values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
VR(V)
F=1MHz
Vosc=30mV
RMS
Tj=25°C
C(pF)
Fig. 4:
Junction capacitance versus reverse
voltage applied (typical values).
10.0
100.0
1000.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
tp(s)
Zth(j-a)(°C/W)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (printed circuit
board, epoxy FR4).
300
350
400
450
500
550
600
0
5
10
15
20
25
30
35
40
45
50
S(mm)
Rth(j-a)
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (printed
circuit board, epoxy FR4)..
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