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參數(shù)資料
| 型號(hào)： | STD790AT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Medium Current, High Performance, Low Voltage PNP Transistor |
| 中文描述： | 中等電流，高性能，低電壓PNP晶體管 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 187K |
| 代理商： | STD790AT4 |
STD790AT4
10/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| STD790BLK | 功能描述:LED 安裝硬件 .2" DIA X .79" BLACK RoHS:否 制造商:Bivar 產(chǎn)品:LED Mounting Clips LED 大小:5 mm 材料:Nylon 顏色:Black 主體長(zhǎng)度:4.4 mm 面板厚度尺寸: 封裝:Bulk |
| STD7ANM60N | 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V DPAK |
| STD7LN80K5 | 功能描述:MOSFET N-CH 800V 5A DPAK 制造商:stmicroelectronics 系列:MDmesh?? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:800V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:5A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:1.15 歐姆 @ 2.5A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時(shí)的柵極電荷（Qg）:12nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:270pF @ 100V 功率 - 最大值:85W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:DPAK 標(biāo)準(zhǔn)包裝:1 |
| STD7N52DK3 | 功能描述:MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD7N52K3 | 功能描述:MOSFET N-channel 525 V 6.3 A DPAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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