參數(shù)資料
型號(hào)： STD6N10L1
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251AA
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 6A條（?。﹟對(duì)251AA
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 171K
代理商： STD6N10L1
STD6N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.35
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.45
I
D
STD6N10
100 V
6 A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
DGR
100
±
20
6
V
V
GS
V
I
D
A
I
D
4
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
24
A
35
W
Derating Factor
0.23
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關(guān)PDF資料
PDF描述
STD6N10LT4 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252
STD6N10T4 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252
STD6NC40-1 Resettable Fuse; Series:250R; Thermistor Type:PTC; Operating Voltage Max:60V; Holding Current:0.18A; Tripping Current:0.65A; Length:12mm; Lead Pitch:5.1mm; Initial Resistance Min:0.8ohm; Initial Resistance Max:4ohm RoHS Compliant: Yes
STD6NC40T4 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-252AA
STD6NF10-1 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD6N10LT4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252
STD6N10T4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252
STD6N52K3 功能描述:MOSFET N-channel 525 V MDMesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD6N60M2 制造商:STMicroelectronics 功能描述:POWER MOSFET - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V DPAK 制造商:STMicroelectronics 功能描述:STD6N60M2 Series 600 V 4.5 A 1.2 Ohm N-channel Power MOSFET - TO-252-3 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 4.5A DPAK 制造商:STMicroelectronics 功能描述:MOSFET N-Ch 600V 4.5A MDmesh II DPAK 制造商:STMicroelectronics 功能描述:N-channel 600V,1.06Ohm,4.5A Power MOSFET 制造商:STMicroelectronics 功能描述:600V,1.06,4.5A,N-Channel Power MOSFET
STD6N62K3 功能描述:MOSFET N-Channel 620V 1.1 Ohms 5.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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