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參數(shù)資料
| 型號(hào)： | STD5NM60T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 5A條（?。﹟對(duì)252AA |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 87K |
| 代理商： | STD5NM60T4 |
STD5N20
2/8
THERMAL DATA
Rthj-case
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
2.77
°
C/W
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
100
Rthc-sink
Thermal Resistance Case-sink Typ
1.5
T
l
Maximum Lead Temperature For Soldering Purpose
275
Parameter
Max Value
Unit
I
AR
5
A
E
AS
130
mJ
Test Conditions
Min.
Typ.
Max.
Unit
I
D
= 250
μ
A, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
1
μ
A
μ
A
50
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20V
±
100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 2.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
0.7
0.8
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
5
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.5A
Min.
Typ.
Max.
Unit
Forward Transconductance
1.5
4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
350
pF
C
oss
Output Capacitance
70
pF
C
rss
Reverse Transfer
Capacitance
35
pF
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