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參數(shù)資料
| 型號(hào)： | STD5NM50T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 5A條（?。﹟對(duì)252AA |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | STD5NM50T4 |
STD5N20
2/8
THERMAL DATA
Rthj-case
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
2.77
°
C/W
°
C/W
°
C/W
°
C
Rthj-amb
Thermal Resistance Junction-ambient Max
100
Rthc-sink
Thermal Resistance Case-sink Typ
1.5
T
l
Maximum Lead Temperature For Soldering Purpose
275
Parameter
Max Value
Unit
I
AR
5
A
E
AS
130
mJ
Test Conditions
Min.
Typ.
Max.
Unit
I
D
= 250
μ
A, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
1
μ
A
μ
A
50
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20V
±
100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 2.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
0.7
0.8
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
5
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.5A
Min.
Typ.
Max.
Unit
Forward Transconductance
1.5
4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
350
pF
C
oss
Output Capacitance
70
pF
C
rss
Reverse Transfer
Capacitance
35
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD5NM50T4 | 制造商:STMicroelectronics 功能描述:Transistor Polarity:N Channel |
| STD5NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 5A DPAK |
| STD5NM60_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK |
| STD5NM601 | 制造商:n/a 功能描述:STD5NM60-1 |
| STD5NM60-1 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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