參數(shù)資料
型號(hào)： STD40NF10
英文描述： N-CHANNEL 100V - 0.024 OHM - 50A TO-220/D2PAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
中文描述： N溝道100V的- 0.024歐姆- 50A條TO-220/D2PAK/DPAK低柵極電荷STRIPFET二功率MOSFET
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 89K
代理商： STD40NF10
3/8
STD40NF06LZ
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s,duty cycle 1.5 %
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 20 A
V
GS
= 4.5 V
17
75
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=48 V I
D
=40 A V
GS
=10V
54
11
12
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 20 A
V
GS
= 4.5 V
38
23
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM(
)
Source-drain Current
Source-drain Current (pulsed)
40
160
A
A
V
SD(*)
Forward On Voltage
I
SD
= 40A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A
V
DD
= 30 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
66
142
4.3
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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