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參數(shù)資料
| 型號(hào)： | STD3NM50T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 3A條（?。﹟對(duì)252AA |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大小： | 172K |
| 代理商： | STD3NM50T4 |
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder anypatent or patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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written approvalof SGS-THOMSON Microelectonics.
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STD3N25
10/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD3NM60 | 制造商:STMicroelectronics 功能描述:MOSFET N D-PAK 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 3A DPAK |
| STD3NM60-1 | 功能描述:MOSFET N-Ch, 600V-1.3ohms Mdmesh 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60N | 功能描述:MOSFET N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 3 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD3PK50Z | 功能描述:MOSFET P-Ch 500V 3 Ohm 2.8A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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