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參數(shù)資料
| 型號： | STD2N50T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直|甲（丁）|至252 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 174K |
| 代理商： | STD2N50T4 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.78
100
1.5
275
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
2
A
E
AS
20
mJ
E
AR
1.5
mJ
I
AR
1.2
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
500
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
20 V
T
c
= 125
o
C
25
250
±
100
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 1 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 10V
4.5
5.5
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
2
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1 A
0.65
1
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
200
35
12
270
50
18
pF
pF
pF
STD2N50
2/10
相關PDF資料 |
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|---|---|
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| STD2NA60-1 | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 2.3A I(D) | TO-251 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD2N62K3 | 功能描述:MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH 3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2N80K5 | 制造商:STMicroelectronics 功能描述:N-CHANNEL 800 V, 3.5 OHM TYP., 2 A ZENER-PROTECTED SUPERMESH - Tape and Reel 制造商:STMicroelectronics 功能描述:MOSFET N-CH 800V 2A DPAK 制造商:STMicroelectronics 功能描述:800V, 2A, 3.5OHM, ZENER PROTECTED, N-CHANNEL, DPAK |
| STD2N95K5 | 制造商:STMicroelectronics 功能描述:N-CHANNEL 950 V, 4.2 OHM TYP., 2 A ZENER-PROTECTED SUPERMESH - Tape and Reel 制造商:STMicroelectronics 功能描述:950V, 4.2OHM, 2A, ZENER PROTECTED POWER MOSFET, N-CHANNEL, DPAK |
| STD2NA40T4 | 功能描述:MOSFET N-Ch 400 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NA50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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