參數(shù)資料
型號(hào)： STD12NF06L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET
中文描述： N溝道60V的- 0.08歐姆-第12A像是iPak / DPAK封裝STripFET⑩二功率MOSFET
文件頁(yè)數(shù)： 1/10頁(yè)
文件大小： 444K
代理商： STD12NF06L
1/10
June 2003
.
STD12NF06L
N-CHANNEL 60V - 0.08
- 12A IPAK/DPAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.08
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOW GATE CHARGE
I
LOW THRESHOLD DRIVE
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STD12NF06L
60 V
< 0.1
12 A
3
2
1
1
3
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
≤
12A, di/dt
≤
200A/μs, V
=40V, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
AR
= 6A, V
DD
= 30V
Parameter
Value
60
60
± 16
12
8.5
48
30
0.2
15
100
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STD16NF06L N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET
STD16NF06L-1 N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET
STD16NF06LT4 N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSFET
STD17N05L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD12NF06L 制造商:STMicroelectronics 功能描述:MOSFET N LOGIC D-PAK
STD12NF06L_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.08з - 12A - DPAK - IPAK STripFET⑩ II Power MOSFET
STD12NF06L-1 功能描述:MOSFET N-Ch 60 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD12NF06LT4 功能描述:MOSFET N-Ch 60 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD12NF06LT4 制造商:STMicroelectronics 功能描述:MOSFET
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