參數(shù)資料
型號(hào)： STB90NF03L-1
廠(chǎng)商： 意法半導(dǎo)體
英文描述： BOX MOUNTING RECEPTACLE
中文描述： N溝道30V的- 0.0056ohm - 90A型TO-220/I2PAK低柵極電荷STripFET⑩功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 274K
代理商： STB90NF03L-1
1/9
April 2003
STP90NF03L
STB90NF03L-1
N-CHANNEL 30V - 0.0056
- 90A TO-220/I
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0056
I
TYPICAL Q
g
= 35 nC @ 5V
I
OPTIMAL R
DS
(on) x Q
g
TRADE-OFF
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size
”
strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
STP90NF03L
STB90NF03L-1
30 V
30 V
< 0.0065
< 0.0065
90 A
90 A
MARKING
PACKAGE
PACKAGING
STP90NF03L
P90NF03L
TO-220
TUBE
STB90NF03L-1
B90NF03L
I
2
PAK
TUBE
TO-220
1
2
3
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STP9NA50 N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STP9NA50FI N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STP9NK65ZFP CONNECTOR ACCESSORY
STP9NK90Z N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STF9NK90 N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB90NF3LL 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0048 ohm - 80A D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
STB90NF3LLT4 制造商:STMicroelectronics 功能描述:
STB95N3LLH6 功能描述:MOSFET N-channel 30 V 80 A DPAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB95N4F3 功能描述:MOSFET N-Ch 40V 5.0mOhm 80A STripFET III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB95NF03 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0065 ohm - 95A DPAK STripFET⑩ II POWER MOSFET
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