參數(shù)資料
型號(hào): STB8NC50
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET
中文描述: N溝道500V - 0.7ohm - 8A條采用D2PAK PowerMesh第二MOSFET的⑩
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 441K
代理商: STB8NC50
1/9
November 2001
STB8NC50
N-CHANNEL 500V - 0.7
- 8A D
2
PAK
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 0.7
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)I
SD
8A, di/dt
300A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STB8NC50
500V
< 0.85
8 A
Parameter
Value
Unit
500
V
500
V
±30
V
8
A
5.4
A
32
A
135
W
1
3
W/°C
V/ns
–65 to 150
°C
150
°C
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
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