- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385874 > STB6NB90 (意法半導(dǎo)體) N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET PDF資料下載
參數(shù)資料
| 型號： | STB6NB90 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET |
| 中文描述： | ? -頻道900V - 1.7OHM - 5.8A -采用D2PAK PowerMESHO MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 48K |
| 代理商： | STB6NB90 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.92
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
5.8
A
E
AS
750
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
900
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
50
μ
A
μ
A
nA
I
GSS
V
GS
=
±
30 V
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V I
D
= 3 A
1.7
2
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
5.8
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3 A
1.5
6
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
1400
160
18
pF
pF
pF
STB6NB90
2/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB95NF03 | 30V N-Channel PowerTrench MOSFET |
| STBR406 | 50-60Hz RECTIFICATION BRIDGE |
| STBR408 | 50-60Hz RECTIFICATION BRIDGE |
| STBV32 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| STBV42 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB6NB90T4 | 功能描述:MOSFET N-CH 900V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB6NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET |
| STB6NC60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET |
| STB6NC60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
| STB6NC80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。