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參數(shù)資料
| 型號(hào)： | STB6NB50T4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 5.8AI（四）|對(duì)263AB |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 92K |
| 代理商： | STB6NB50T4 |
STB6NB50
N - CHANNEL 500V - 1.35
- 5.8A - D2PAK/I2PAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.35
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1999
TYPE
V
DSS
R
DS(on)
< 1.5
I
D
STB6NB50
500 V
5.8 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
DGR
V
GS
Drain-source Voltage (V
GS
= 0)
500
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
500
V
±
30
5.8
V
I
D
A
I
D
3.7
A
I
DM
(
)
P
tot
23.2
A
100
W
0.8
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
(
1
) I
SD
≤
6A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
123
I
2
PAK
TO-262
(suffix”-1”)
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
1/9
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