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參數(shù)資料
| 型號(hào)： | STB60N03L-10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | PC 3C 38#16 PIN RECP |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 87K |
| 代理商： | STB60N03L-10 |
STB60N03L-10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMIRARY DATA
I
TYPICAL R
DS(on)
= 0.0085
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
I
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
30
±
20
60
V
V
A
I
D
42
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
240
A
150
W
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
March 1996
TYPE
V
DSS
R
DS(on)
< 0.01
I
D
STB60N03L-10
30 V
60 A
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/6
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|---|---|
| STB60N06-14 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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