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參數(shù)資料
| 型號： | STB60K49P |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 66K |
| 代理商： | STB60K49P |
SOLID STATE DEVICES, INC.
Electrical Characteristics
Part
Number
STA60K7.9P
thru
STA60K100P
STA60K7.9P
STA60K8.9P
STA60K9.8P
STA60K10.7P
STA60K11P
STA60K12.7P
STA60K13.5P
STA60K15P
STA60K16.7P
STA60K18P
STA60K20.2P
STA60K22.6P
STA60K24.5P
STA60K27.9P
STA60K30.5P
STA60K34P
STA60K36P
STA60K39P
STA60K45P
STA60K49P
STA60K51P
STA60K57P
STA60K62P
STA60K68P
STA60K75P
STA60K82P
STA60K91P
STA60K100P
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
A
7.0
6.0
5.0
4.0
3.0
2.6
2.0
1.6
1.2
1.0
0.8
0.6
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
14.5
15.0
16.0
17.5
18.5
19.5
21.0
23.0
25.0
27.0
30.0
33.5
36.0
40.0
43.5
47.0
52.0
55.0
60.0
65.0
70.0
78.0
87.0
93.0
103.3
113.5
126.5
138.5
.03
.05
.06
.07
.08
.09
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.15
0.16
0.18
0.25
0.40
0.50
0.60
0.70
1.0
1.2
1.4
1.8
2.0
2.2
2.5
3.0
4.0
4.5
60
48
1.6
0.8
5120
4800
4360
4000
3720
3480
3160
2720
2560
2280
2080
1880
1720
1560
1400
1280
1200
1080
1000
920
840
760
680
640
560
520
480
440
Ohms
Volts
% / °C
7.9
8.9
9.8
10.7
11.0
12.7
13.5
15.0
16.7
18.0
20.2
22.6
24.5
27.9
30.5
34.0
36.0
39.0
45.0
49.0
51.0
57.0
62.0
68.0
75.0
82.0
91.0
100.0
28
30
33
38
43
45
48
50
63
70
75
95
125
175
200
175
250
300
350
450
500
550
625
750
1000
1125
For optional high reliability screening or higher zener voltages, consult SSDI MARKETING Department.
mA
Volts
A
Volts
For 5% Voltage
Tolerance specify
"B" in place of A
V
BR
@I
BRT
V
RWM
V
C
I
PP
I
RM
Z
BR @ IBRT
TC
I
R @ VRWM
Nominal
Voltage
Test
Current
Voltage
Reverse
Leakage
Current
Voltage
(max)
@ Current
tp=1ms
(note 4)
Maximum
Continuous
Current
(note 3)
Dynamic
Impedance
(note 2)
Maximum
Termperature
Coefficient
Break Down (note 1)
Max Reverse Stand Off
Peak Pulse Clamping
A
PEAK
PULSE
POWER
(KW
)
PEAK PULSE POWER VS. PULSE WIDTH
PULSE WIDTH
CURRENT PULSE WAVEFORM
STEADY STATE POWER DERATING
%
PEAK
V
ALUE
STEADY
ST
A
TE
POWER
(%
of
25
c
rated
power)
CASE TEMPERATURE (
°C)
Notes:
1 .
All voltages are measured with automated test set using 35 msec test time. Longer or shorter test times will have a corresponding effect on the measured
value due to heating effects.
2 .
Dynamic impedance is derived from the AC voltage divided by the AC current with RMS value of 10% of DC test current superimposed on the test
current.
3 .
Ratings based on 25° C case temperature.
4 .
Pulse width (tp) is delined as the time from rated peak pulse current IPP to the point where peak pulse current decayed to 50% of rated IPP.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB60N03L-10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60N06-14-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-262AA |
| STB60N06HDT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| STB60N55F3 | 功能描述:MOSFET STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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