參數(shù)資料
型號(hào)： STB5NC90Z-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
中文描述： N溝道900V - 2.1ohm - 4.6a進(jìn)入TO-220/FP/D巴基斯坦/我巴基斯坦齊保護(hù)的PowerMESH⑩三MOSFET的
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 516K
代理商： STB5NC90Z-1
1/13
December 2002
STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1
- 4.6A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 2.1
I
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP5NC90Z/FP
900V
< 2.5
4.6 A
STB5NC90Z/-1
900V
< 2.5
4.6 A
Parameter
Value
Unit
STP(B)5NC90Z(-1)
STP5NC90ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
900
V
900
V
Gate- source Voltage
± 25
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
4.6
4.6(*)
A
2.9
2.9(*)
A
Drain Current (pulsed)
18
18
A
Total Dissipation at T
C
= 25°C
Derating Factor
125
40
W
1
0.32
W/°C
I
GS
Gate-source Current (*)
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
±50
mA
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
3
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
4.6A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*)
.
Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
123
I2PAK
(Tabless TO-220)
1
3
D2PAK
相關(guān)PDF資料
PDF描述
STP5NK40ZFP N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
STD5NK40ZT4 N-CHANNEL 400V - 1.47 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STD5NK40Z-1 N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
STP5NK40Z N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
STD5NK40Z N-CHANNEL 400V - 1.47ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB5NC90ZT4 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
STB5NK50Z 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STB5NK50Z_05 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?MOSFET
STB5NK50Z-1 功能描述:MOSFET N-CHANNEL 500 V 1.22 OHM - 4.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB5NK50ZT4 功能描述:MOSFET N-Ch 500 Volt 4.4Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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