參數(shù)資料
型號: STB45NF3LL
廠商: 意法半導體
英文描述: N-CHANNEL 30V - 0.014ohm - 45A TO-220 - TO220FP - D2PAK STripFET II⑩ POWER MOSFET
中文描述: N溝道30V的- 0.014ohm - 45A條至220 - TO220FP -采用D2PAK STripFET二⑩功率MOSFET
文件頁數(shù): 1/11頁
文件大小: 527K
代理商: STB45NF3LL
1/11
November 2002
STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-CHANNEL 30V - 0.014
- 45A TO-220 - TO220FP - D
2
PAK
STripFET II POWER MOSFET
(1) Starting T
j
= 25°C, I
D
= 22.5A, V
DD
= 24V
I
TYPICAL R
DS
(on) = 0.014
@4.5V
I
OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size
strip-based process. The
resulting transistor shows the best trade-off be-
tween on-resistance ang gate charge. When used
as high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP45NF3LL
STP45NF3LLFP
STB45NF3LL
30 V
30 V
30 V
<0.018
<0.018
<0.018
45 A
45 A
27 A
Parameter
Value
Unit
TO-220/D
2
PAK
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
30
V
30
V
± 16
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
45
27
A
32
19
A
Drain Current (pulsed)
180
108
A
Total Dissipation at T
C
= 25°C
Derating Factor
70
25
W
0.46
0.167
W/°C
E
AS
(1)
Viso
T
stg
T
j
Single Pulse Avalanche Energy
241
mJ
Insulation Withstand Voltage (DC)
--
2500
V
Storage Temperature
– 55 to 175
°C
Max. Operating Junction Temperature
D
2
PAK
1
3
1
2
3
TO-220
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
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