參數(shù)資料
型號: STB210NF02T4
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 120A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 20V的五(巴西)直| 120A條(丁)|對263AB
文件頁數(shù): 3/14頁
文件大?。?/td> 194K
代理商: STB210NF02T4
3/14
STB210NF02/-1 STP210NF02
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s,duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 60 A
V
GS
= 10 V
35
360
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=10V I
D
=120A V
GS
=10V
125
40
50
150
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 60 A
V
GS
= 10 V
75
110
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM(
)
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
V
SD(*)
Forward On Voltage
I
SD
= 120 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A
V
DD
= 15 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
70
120
3.5
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
Thermal Impedance
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