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參數資料
| 型號： | STB20NE06L |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET |
| 中文描述： | ? -通道60V的- 0.06ohm - 20A至- 263 STripFET]功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | STB20NE06L |
STB20NE06L
N - CHANNEL 60V - 0.06
- 20A TO-263
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.06
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
LOW THRESHOLD DRIVE
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique ”Single Feature Size
”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkable manufacturingreproducibility.
APPLICATIONS
I
DC MOTORCONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
June 1999
1
3
D
2
PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
60
V
±
20
20
V
A
I
D
14
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
80
A
70
W
0.47
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 175
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
(
1
) I
SD
≤
20 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.07
I
D
STB20NE06L
60 V
20 A
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STB20NF06L | N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
| STB20NF06LT4 | N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
| STP20NF06L | N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
| STB20NM60D | N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET |
| STB270N04 | N-CHANNEL 40V - 2.1m-ohm - 160A - TO-220 - D-2PAK - I-2PAK STripFET-TM Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STB20NE06LT4 | 制造商:STMicroelectronics 功能描述: |
| STB20NE06T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| STB20NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
| STB20NF06LT4 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB20NK50Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 |
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