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參數資料
| 型號： | STB19NB20 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| 中文描述： | N溝道增強模式PowerMESHTM MOSFET的（不適用溝道增強模式MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | STB19NB20 |
STB19NB20
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.150
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
EXTREMELY HIGH dv/dt CAPABILITY
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
Using
OVERLAY
process,
designed
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company’s
proprietary
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled
gate
charge
characteristics.
the
latest
high
SGS-Thomson
advanced
voltage
MESH
has
Power
an
family
of
edge
termination
and
switching
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE R E
This ispreliminary information on a new product now in development or undergoing evaluation. Details are subject to changewithout notice.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
200
200
±
30
19
12
76
125
1
5.5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
19A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
October 1997
TYPE
V
DSS
200 V
R
DS(on)
< 0.180
I
D
STB19NB20
19 A
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
1/6
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STB19NB20-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET |
| STB19NF20 | 功能描述:MOSFET 200V 0.15Ohm 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NM65N | 功能描述:MOSFET N-Channel 650V 0.25 Ohms 15.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NM65NT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh? Power MOSFET |
| STB1GA14 | 制造商:n/a 功能描述:Ships in 2 days |
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