參數(shù)資料
型號: STB15K8.2P
廠商: SOLID STATE DEVICES INC
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: HERMETIC SEALED PACKAGE-2
文件頁數(shù): 2/2頁
文件大小: 78K
代理商: STB15K8.2P
STA15K7.5P thru
STA15K100P
Solid State Devices, Inc.
14701 Firestone Blvd, La Mirada, Ca 90638
Phone: (562) 404-4474
Fax: (562) 404-1773
ssdi@ssdi-power.com
www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Break Down (note 1)
Max Reverse Stand Off
Peak Pulse Clamping
Part
Number
(note 5)
Nominal
Voltage
Test
Current
Voltage
Reverse
Leakage
Current
Voltage
(Max)
@ Current
Tp=1ms
(note 4)
Maximum
Continuous
Current
(note 4)
Dynamic
Impedance
(note 2)
Max
Temperat
ure
Coefficient
VBR
@IBRT
VRWM
IR@VRWM
VC
IPP
IRM
ZBR@IBRT
TC
Volts
Amps
Volts
mA
Volts
Amps
Ohms
%/°C
STA15K7.5P
STA15K8.2P
STA15K9.1P
STA15K10P
STA15K11P
STA15K12P
STA15K13P
STA15K15P
STA15K16P
STA15K18P
STA15K20P
STA15K22P
STA15K24P
STA15K27P
STA15K30P
STA15K33P
STA15K36P
STA15K39P
STA15K43P
STA15K47P
STA15K51P
STA15K56P
STA15K62P
STA15K68P
STA15K75P
STA15K82P
STA15K91P
STA15K100P
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
1.75
1.50
1.25
1.00
0.75
0.65
0.50
0.40
0.30
0.25
0.20
0.15
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
15.0
12.0
0.40
0.20
0.15
0.10
0.04
0.02
11.7
12.5
13.8
15.0
16.2
17.3
19.0
22.0
23.5
26.5
29.0
31.9
34.7
38.5
42.9
46.9
50.0
55.6
60.0
65.2
71.4
78.9
88.2
93.7
107.1
115.4
125.0
136.4
1280
1200
1090
1000
930
870
790
680
640
570
520
470
430
390
350
320
300
270
250
230
210
190
170
160
140
130
120
110
12.5
11.5
10.2
9.5
8.6
7.7
7.0
6.0
5.5
5.0
4.4
3.9
3.6
3.1
2.8
2.6
2.4
2.1
1.8
1.75
1.7
1.6
1.5
1.3
1.2
1.1
1.0
.9
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.15
0.16
0.18
0.25
0.40
0.50
0.60
0.70
1.0
1.2
1.4
1.8
2.0
2.2
2.5
3.0
4.0
4.5
.03
.05
.06
.07
.08
.09
PEAK PULSE POWER VS. PULSE WIDTH
CURRENT PULSE WAVEFORM
STEADY STATE POWER DERATING
PEAK
PULSE
POWER
(kW)
%
PEAK
VALUE
STEADY
STATE
POWER
(%
of
25
°C
Rated
Power)
PULSE WIDTH
CASE TEMPERATURE (
°C)
For optional high reliability screening or higher zener voltages, consult SSDI MARKETING Department.
Notes:
1.
All voltages are measured with automated test set using 35 msec test time. Longer or shorter test times will have a corresponding effect on the measured value
due to heating effects.
2.
Dynamic impedance is derived from the AC voltage divided by the AC current with RMS value of 10% of DC test current superimposed on the test current.
3.
Ratings based on 25° C case temperature.
4. Pulse width (tp) is delined as the time from rated peak pulse current IPP to the point where peak pulse current decayed to 50% of rated IPP.
(10ms X 1000ms waveform as defined by R.E.A.)
5.
Part Number- For 5% Voltage Tolerance, sp ecify “B” in place of “A”
相關(guān)PDF資料
PDF描述
STB15K91P 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
STB15K68P 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
STB15K16P 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
STB15K33P 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
STB60K150S 60000 W, BIDIRECTIONAL, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB15N25 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STB15N65M5 功能描述:MOSFET N-Ch 650V 0.308 Ohm 11A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB15N80K5 功能描述:MOSFET N-Ch 800V 0.3Ohm typ SuperMESH V 14A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB15NK50Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL500V-0.30ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STB15NK50Z-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH? Power MOSFET