- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380759 > STB11NM60FDT4 (意法半導(dǎo)體) N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE PDF資料下載
參數(shù)資料
| 型號： | STB11NM60FDT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE |
| 中文描述： | N溝道600V的- 0.40ohm - 11A至- 220 / TO-220FP/I2PAK FDmesh？功率MOSFET，快速二極管 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 332K |
| 代理商： | STB11NM60FDT4 |
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)Pulse width limited by safe operating area
(1)I
SD
<11A, di/dt<400A/μs, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
(*)Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 35 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Parameter
Value
Unit
STP11NM60FD
STB11NM60FD
STB11NM60FD-1
STP11NM60FDFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
11
11 (*)
A
7
7 (*)
A
Drain Current (pulsed)
44
44 (*)
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Peak Diode Recovery voltage slope
160
35
W
0.88
0.28
W/
°
C
V/ns
dv/dt (
1
)
V
ISO
T
stg
T
j
20
Insulation Winthstand Voltage (DC)
--
2500
V
Storage Temperature
–
65 to 150
°
C
Max. Operating Junction Temperature
TO-220/I
2
PAK
D
2
PAK
0.78
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
3.57
°
C/W
°
C/W
62.5
Maximum Lead Temperature For Soldering Purpose
300
°
C
Parameter
Max Value
5.5
Unit
A
350
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
100
μA
V
GS
= ±30V
±100
nA
3
4
5
V
V
GS
= 10V, I
D
= 5.5 A
0.40
0.45
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB11NM60FD-1 | N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE |
| STP11NM60FDFP | N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE |
| STB11NM60A-1 | N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET |
| STP11NM60FD | N-CHANNEL 600V - 0.40ohm - 11A TO-220 / TO-220FP/I2PAK FDmesh?Power MOSFET with FAST DIODE |
| STP11NM60FP | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB11NM60N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET |
| STB11NM60N-1 | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB11NM60T4 | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB11NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB11NM80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。