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參數(shù)資料
| 型號： | STB10NB50T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10.6A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 10.6AI（四）|對263AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 144K |
| 代理商： | STB10NB50T4 |
3/9
STB100NF03L-03
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s,duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 50 A
V
GS
= 4.5 V
35
315
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V I
D
= 100A V
GS
= 5V
88
22.5
36
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 20 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 50 A
V
GS
= 4.5 V
115
95
ns
ns
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 24 V
R
G
= 4.7
(Inductive Load, Figure 5)
I
D
= 100 A
V
GS
= 4.5 V
110
55
100
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
100
400
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 100 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 100 A
V
DD
= 20 V
(see test circuit, Figure 5)
di/dt = 100A/
μ
s
T
j
= 150
°
C
75
150
4
ns
nC
A
Thermal Impedance
ELECTRICAL CHARACTERISTICS
(continued)
Safe Operating Area
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