參數(shù)資料
型號： STA517B13TR
廠商： 意法半導(dǎo)體
英文描述： 60 V 6 A quad power half bridge
中文描述： 60伏特6阿四重功率半橋
文件頁數(shù)： 10/13頁
文件大?。?/td> 151K
代理商： STA517B13TR
Test
STA517B
10/13
Figure 6.
Typical single BTL configuration to obtain 350 W @ THD 10 %, RL = 4
,
VCC = 54 V
(a)
Figure 7.
Typical quad half bridge configuration
For more information, refer to the application note “ST50X and STA51X digital power
amplifiers”.
a.
A PWM modulator as driver is required. This result was obtained using the STA30X+STA50X demo board.
12
μ
H
12
μ
H
100nF
FILM
100nF
X7R
100nF
X7R
1
μ
F
X7R
2200
μ
F
63V
680nF
FILM
100nF
FILM
100nF
10K
10K
6.2
1/2W
6.2
1/2W
100nF
X7R
100nF
X7R
Add.
IN1A
IN1A
VL
CONFIG
PWRDN
nPWRDN
FAULT
TRI-STATE
TH_WAR
TH_WAR
+3.3V
100nF
100nF
X7R
IN1B
V
DD
V
DD
V
SS
V
SS
V
CC
SIGN
V
CC
SIGN
GND-Reg
GND-Clean
IN1B
IN2A
29
23
N.C.
24
25
27
26
28
30
21
22
33
34
35
36
17
16
18
OUT1A
GND1B
OUT1A
V
CC
1B
10
13
11
OUT1B
GND1A
OUT1B
14
+36V
330pF
22
1/2W
4
GND2A
6
2
12
V
CC
1A
15
V
CC
2B
4
V
CC
2A
7
3
OUT2B
GND2B
D04AU1545
OUT2B
5
19
31
20
GNDSUB
1
IN2B
32
8
9
OUT2A
OUT2A
1
μ
F
X7R
+36V
L11 22
μ
H
L12 22
μ
H
C51
1
μ
F
C71
100nF
C91
1
μ
F
C81
100nF
C31 820
μ
F
C21
2200
μ
F
C58
100nF
C58
100nF
R57
10K
R59
10K
R41
20
R61
5K
R62
5K
R51
6
C53
100nF
C60
100nF
C61
100nF
15
M3
IN1A
IN1A
VL
CONFIG
PWRDN
PWRDN
FAULT
TRI-STATE
TH_WAR
TH_WAR
+3.3V
IN1B
V
DD
V
DD
V
SS
V
SS
V
CC
SIGN
V
CC
SIGN
GND-Reg
GND-Clean
IN2A
IN1B
IN2A
IN2B
PROTECTIONS
&
LOGIC
REGULATORS
29
23
24
25
27
26
28
30
21
22
33
34
35
36
M2
M5
M4
17
16
OUTPL
PGND1P
OUTPL
V
CC
1P
14
12
10
11
OUTNL
PGND1N
OUTNL
V
CC
1N
13
C52
1
μ
F
+V
CC
C62
100nF
7
M17
M15
M16
M14
8
9
OUTPR
PGND2P
OUTPR
V
CC
2P
6
4
2
3
OUTNR
PGND2N
D03AU1474
OUTNR
V
CC
2N
5
19
31
20
GNDSUB
1
IN2B
32
C72
100nF
C92
1
μ
F
C82
100nF
R52
6
C41
330pF
R42
20
C42
330pF
C32 820
μ
F
L13 22
μ
H
L14 22
μ
H
C73
100nF
C93
1
μ
F
C83
100nF
C33 820
μ
F
R43
20
R53
6
C74
100nF
C94
1
μ
F
C84
100nF
R54
6
C43
330pF
R44
20
C44
330pF
C34 820
μ
F
R63
5K
R64
5K
R65
5K
R66
5K
R67
5K
R68
5K
4
4
4
4
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