參數(shù)資料
型號: ST93CS67B6013TR
廠商: 意法半導(dǎo)體
英文描述: 4K 256 x 16 SERIAL MICROWIRE EEPROM
中文描述: 4K的256 × 16系列MICROWIRE的EEPROM的
文件頁數(shù): 1/16頁
文件大?。?/td> 124K
代理商: ST93CS67B6013TR
ST93CS66
ST93CS67
4K (256 x 16) SERIALMICROWIRE EEPROM
NOT FOR NEW DESIGN
June 1997
1/16
This is information on a product still in production butnot recommendedfor new designs.
AI00906B
D
VCC
ST93CS66
ST93CS67
VSS
C
Q
PRE
W
S
Figure 1. Logic Diagram
1 MILLION ERASE/WRITE CYCLES, with
40 YEARSDATARETENTION
SELF-TIMED PROGRAMMINGCYCLEwith
AUTO-ERASE
READY/BUSYSIGNALDURING
PROGRAMMING
SINGLE SUPPLYVOLTAGE
– 3V to 5.5V for the ST93CS66
– 2.5V to 5.5V for the ST93CS67
USER DEFINED WRITE PROTECTED AREA
PAGEWRITE MODE (4 WORDS)
SEQUENTIALREAD OPERATION
5ms TYPICALPROGRAMMING TIME
ST93CS66 and ST93CS67 are replaced by
the M93S66
DESCRIPTION
The ST93CS66 and ST93CS67 are 4K bit Electri-
callyErasable ProgrammableMemory (EEPROM)
fabricatedwith SGS-THOMSON’sHighEndurance
SinglePolysilicon CMOS technology.The memory
is accessedthrough a serial input D and output Q.
The 4K bit memory is organized as 256 x 16 bit
words.Thememory is accessedby asetof instruc-
tions which include Read, Write, Page Write, Write
Alland instructionsused to set thememoryprotec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
PRE
Protect Enable
W
Write Enable
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
1
14
SO14 (ML)
150mil Width
8
1
PSDIP8 (B)
0.25mm Frame
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