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參數資料
| 型號： | ST93C67B1TR |
| 廠商： | 意法半導體 |
| 英文描述： | 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| 中文描述： | 4K的256 × 16或512 × 8 MICROWIRE的串行EEPROM的 |
| 文件頁數： | 2/13頁 |
| 文件大?。?/td> | 107K |
| 代理商： | ST93C67B1TR |
The memory is accessed by a set of instructions
which includes Read a byte/word, Write a
byte/word,Erasea byte/word,Erase All and Write
All. AReadinstructionloads the addressof thefirst
byte/word to be read into an internal address
pointer.The data containedat this addressis then
clocked out serially. The address pointer is auto-
matically incremented after the data is output and,
if the Chip Select input (S) is held High, the
ST93C66 can output a sequential stream of data
bytes/words. In this way,the memorycan be read
as a data stream from 8 to 4096 bits long, or
continuouslyas the addresscounterautomatically
rolls over to ’00’ when the highest address is
reached.Programming is internally self-timed (the
external clock signal on C input may be discon-
nectedorleftrunningafterthestart ofaWritecycle)
and does not require an erase cycle prior to the
Write instruction. The Write instruction writes 8 or
16 bits at one time into oneof the 512 bytesor256
words. After the start of the programmingcycle, a
Busy/Readysignal is available on the Data output
(Q)when Chip Select(S) is driven High.
The design of the ST93C66 and the High Endur-
anceCMOStechnologyusedforitsfabricationgive
an Erase/Write cycle Endurance of 1,000,000 cy-
clesand adata retention of 40 years.
TheDU (Don’tUse) pindoesnotaffectthefunction
of the memory and it is reserved for use by SGS-
THOMSONduringtestsequences.Thepinmaybe
left unconnected or may be connected to V
CC
or
V
SS
. Direct connection of DU to V
SS
is recom-
mended for the lowest standby power consump-
tion.
VSS
Q
ORG
DU
C
D
S
VCC
AI01253B
ST93C66
ST93C67
1
2
3
4
8
7
6
5
Figure2A. DIPPin Connections
1
2
3
4
VSS
Q
ORG
DU
C
D
S
VCC
AI01254C
ST93C66
ST93C67
8
7
6
5
Figure 2B. SOPin Connections
DESCRIPTION
(cont’d)
Warning:
DU = Don’t Use
Warning:
DU = Don’t Use
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
–40 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
T
LEAD
Lead Temperature,Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°
C
V
IO
Input or Output Voltages(Q = V
OH
or Hi-Z)
–0.3 to V
CC
+0.5
V
V
CC
Supply Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
Electrostatic Discharge Voltage (Machine model)
(3)
7000
V
1000
V
Notes:
1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute MaximumRatings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions abovethose indicated in the Operating sectionsof this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500
).
3. EIAJ IC-121 (Condition C) (200pF, 0
).
Table 2. Absolute Maximum Ratings
(1)
2/13
ST93C66, ST93C67
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PDF描述 |
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| ST93C66CM1TR | 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| ST93C67CM1TR | 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| ST93C67CM3TR | 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| ST93C67CM6TR | 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| ST93C67B3TR | 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ST93C67B3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| ST93C67B6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
| ST93C67B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM |
| ST93C67CB1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
| ST93C67CB3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
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