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參數(shù)資料
| 型號： | ST93C57M6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM |
| 中文描述： | 2K 128 x 16或256 × 8 MICROWIRE的串行EEPROM的 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 108K |
| 代理商： | ST93C57M6TR |
The memory is accessed by a set of instructions
which includes Read a byte/word, Write a
byte/word,Erasea byte/word,Erase All and Write
All. AReadinstructionloads the addressof thefirst
byte/word to be read into an internal address
pointer. The datacontainedat this addressis then
clocked out serially. The address pointer is auto-
matically incremented after the data is output and,
if the Chip Select input (S) is held High, the
ST93C56 can output a sequential stream of data
bytes/words. In this way,the memorycan be read
as a data stream from 8 to 2048 bits long, or
continuouslyas the addresscounterautomatically
rolls over to ’00’ when the highest address is
reached.Programming is internally self-timed (the
external clock signal on C input may be discon-
nectedorleftrunningafterthestart ofaWritecycle)
and does not require an erase cycle prior to the
Write instruction. The Write instruction writes 8 or
16 bits at one time into oneof the 256 bytesor128
words. After the start of the programmingcycle, a
Busy/Readysignal is available on the Data output
(Q)when Chip Select(S) is driven High.
The design of the ST93C56 and the High Endur-
anceCMOStechnologyusedforitsfabricationgive
an Erase/Write cycle Endurance of 1,000,000 cy-
clesand adata retention of 40 years.
TheDU (Don’tUse) pindoesnotaffectthefunction
of the memory and it is reserved for use by SGS-
THOMSONduringtestsequences.Thepinmaybe
left unconnected or may be connected to V
CC
or
V
SS
. Direct connection of DU to V
SS
is recom-
mended for the lowest standby power consump-
tion.
VSS
Q
ORG
DU
C
D
S
VCC
AI00882C
ST93C56
ST93C57
1
2
3
4
8
7
6
5
Figure2A. DIPPin Connections
1
2
3
4
VSS
Q
ORG
DU
C
D
S
VCC
AI00883D
ST93C56
ST93C57
8
7
6
5
Figure 2B. SOPin Connections
DESCRIPTION
(cont’d)
Warning:
DU = Don’t Use
Warning:
DU = Don’t Use
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
–40 to125
°
C
T
STG
Storage Temperature
–65 to150
°
C
T
LEAD
Lead Temperature,Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°
C
V
IO
Input or Output Voltages(Q = V
OH
or Hi-Z)
–0.3 to V
CC
+0.5
V
V
CC
Supply Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
4000
V
Electrostatic Discharge Voltage (Machine model)
(3)
500
V
Notes:
1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute MaximumRatings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions abovethose indicated in the Operating sectionsof this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500
).
3. EIAJ IC-121 (Condition C) (200pF, 0
).
Table 2. Absolute Maximum Ratings
(1)
2/13
ST93C56/56C, ST93C57C
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