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參數(shù)資料
| 型號(hào)： | ST93C47AB3013TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| 中文描述： | 每1000 64 x 16或128 × 8 MICROWIRE的串行EEPROM的 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | ST93C47AB3013TR |
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AI00878C
1 1 0 An
A0
Qn
Q0
DATA OUT
D
S
Q
READ
S
WRITE
ADDR
OP
CODE
1 0
An
A0
DATA IN
D
Q
OP
CODE
Dn
D0
1
BUSY
READY
S
ERASE
WRITE
ENABLE
1
0
Xn X0
D
OP
CODE
1
0
1
S
ERASE
WRITE
DISABLE
1
0
Xn X0
D
OP
CODE
0
0
0
CHECK
STATUS
ADDR
Figure6. READ, WRITE, EWEN, EWDS Sequences
Erase
The Erase instruction (ERASE) programs the ad-
dressed memory byteor word bitsto ’1’. Oncethe
addressiscorrectlydecoded,thefallingedgeofthe
Chip Select input (S) starts a self-timed program-
ming cycle.
If the ST93C46 is still performing the write cycle,
the Busysignal (Q= 0)will bereturnedif Sisdriven
high, and the ST93C46will ignoreany dataon the
bus. When thewrite cycle iscompleted,the Ready
signal (Q = 1) will indicate (if S is driven high) that
the ST93C46is ready to receive a new instruction.
Write
The Write instruction (WRITE) is followed by the
addressandthe8or16databitsto bewritten. Data
input is sampled on the Low to High transition of
the clock.After thelast databit has beensampled,
Chip Select (S) must be brought Low before the
next rising edge of the clock(C), in order to start
the self-timed programming cycle. If the ST93C46
is still performing the write cycle, the Busy signal
Notes:
1. An: n = 5 for x16 org. and 6 for x8 org.
2. Xn: n = 3 for x16 org. and 4 for x8 org.
7/13
ST93C46A/46C/46T, ST93C47C/47T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST93C47AB3TR | 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47C | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No |
| ST93C47CM1013TR | MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ |
| ST93C47CM3013TR | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Leaded Process Compatible:No |
| ST93C47CM6013TR | MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST93C47AB3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AB6013TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AB6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AM1013TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47AM1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
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