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參數(shù)資料
| 型號： | ST650C20L1PBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1857 A, 2000 V, SCR, TO-200AC |
| 封裝： | LEAD FREE, BPUK-2 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 117K |
| 代理商： | ST650C20L1PBF |
ST650CLPbF Series
Bulletin I25228 09/06
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
Ω, t
r ≤
1s
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 750A, T
J
= T
J
max, di/dt = 60A/s, V
R
= 50V
dv/dt = 20V/s, Gate 0V 100
Ω, t
p
= 500s
Parameter
ST650C..L
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.0
t
q
Typical turn-off time
200
s
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
μsT
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST650C..L
Units Conditions
80
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p ≤
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40°C
mA
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
VT
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST650C..L
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p ≤
5ms
Document Number: 94412
www.vishay.com
3
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