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參數(shù)資料
| 型號(hào)： | ST650C20L0LPBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 1857 A, 2000 V, SCR, TO-200AC |
| 封裝： | LEAD FREE, BPUK-2 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 117K |
| 代理商： | ST650C20L0LPBF |
ST650CLPbF Series
Bulletin I25228 09/06
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Gate Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
0.001
0.01
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J-
h
s
Steady State Value
R
= 0.073 K/ W
(Single Side Cooled)
R
= 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
Tr
a
n
si
e
n
tT
h
e
rm
a
lI
m
p
e
d
a
n
c
e
Z
(K
/W
)
ST650C..L Series
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a )
Tj=
2
5
°
C
Tj=
1
25
°
C
Tj
=
-4
0
°
C
(2)
(3)
InstantaneousGat e Current (A)
In
st
an
tan
eo
u
sG
a
te
V
ol
tag
e
(V
)
a) Recommended load line for
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rec tangular gate pulse
ST650C..L Series
(4)
100
1000
10000
0.51
1.52
2.53
In
st
an
tan
eou
sO
n
-s
tat
e
C
u
rr
en
t
(A
)
InstantaneousOn-state Voltage (V)
ST650C..L Series
T = 25°C
J
T = 125°C
J
Document Number: 94412
www.vishay.com
7
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