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參數(shù)資料
| 型號： | ST333S08PFM0 |
| 英文描述： | Stratix GX FPGA 25K 4-FBGA |
| 中文描述： | 800V的518A逆變晶閘管采用TO - 209AE（至118）封裝 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 171K |
| 代理商： | ST333S08PFM0 |
ST333C..C Series
7
Bulletin I25170 rev. B 04/00
www.irf.com
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
T = 25
°
C
T = 125
°
C
I
Instantaneous On-state Voltage (V)
ST333C..C Series
20
40
60
80
1 0 0
1 2 0
1 4 0
1 6 0
1 8 0
1 0
2 0
3 0
4 0
5 0
60
7 0
8 0
9 0
1 00
M
Rate Of Fall O f Fo rw ard C urren t - di/d t (A /μs)
I = 500 A
300 A
200 A
100 A
50 A
ST333C ..C Series
T = 125
°
C
80
100
120
140
160
180
200
220
240
260
280
300
320
10
20
30
40
50
60
70
80
90 100
I = 500 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/μs)
M
ST333C..C Series
T = 125
°
C
0 .00 1
0 .0 1
0 .1
0 .0 01
0 .0 1
0.1
1
10
Square W ave Pulse D uratio n (s)
t
T
ST33 3C ..C Series
Ste ady State V alue
R = 0.09 K/W
(Sin gle Side C oo le d)
R = 0.04 K/W
(D o uble Side C o ole d)
(D C Ope ratio n)
1 E1
1E1
1E2
1E3
1E4
50 Hz
400
2500
100
Pulse Basew idth (μs)
1000
1500
3000
200
500
5000
ST333C..C Series
Sinusoidal pulse
T = 55
°
C
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
tp
1 E2
1 E3
1 E4
1 E1
1E2
1E3
1 E4
1E4
50 Hz
400
2500
100
Pulse Basew idth (μs)
P
1000
1500
3000
200
500
5000
ST333C..C Series
Sinusoidal pulse
T = 40
°
C
Snubber circuit
R = 10 ohms
C = 0.47 μF
V = 80% V
DRM
tp
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| ST333SP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Stud Version), 330 A |
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| ST-3340 | 制造商:UNBRANDED 功能描述:CLAMP METER |
| ST-3341 | 制造商:UNBRANDED 功能描述:CLAMP METER + C F AND TEMP |
| ST-3343 | 制造商:UNBRANDED 功能描述:CLAMP METER + DC CURRENT |
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