- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄297479 > ST333S04PFL1P (VISHAY INTERTECHNOLOGY INC) 518 A, 400 V, SCR, TO-209AE PDF資料下載
參數(shù)資料
| 型號(hào)： | ST333S04PFL1P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 518 A, 400 V, SCR, TO-209AE |
| 封裝： | LEAD FREE, TO-118, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 325K |
| 代理商： | ST333S04PFL1P |
Document Number: 94377
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 30-Apr-08
3
ST333SP Series
Inverter Grade Thyristors
(Stud Version), 330 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
1000
A/s
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s
Resistive load, gate pulse: 10 V, 5
Ω source
1.0
s
Maximum turn-off time
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/s
VR = 50 V, tp = 500 s, dV/dt = 200 V/s
15
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
500
V/s
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
TJ = TJ maximum, f = 50 Hz, d% = 50
60
W
Maximum average gate power
PG(AV)
10
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5
Maximum DC gate currrent required to trigger
IGT
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
200
mA
Maximum DC gate voltage required to trigger
VGT
3V
Maximum DC gate current not to trigger
IGD
TJ = TJ maximum, rated VDRM applied
20
mA
Maximum DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to case
RthJC
DC operation
0.10
K/W
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.03
Mounting torque, ± 10 %
Non-lubricated threads
48.5
(425)
N m
(lbf in)
Approximate weight
535
g
Case style
See dimensions - link at the end of datasheet
TO-209AE (TO-118)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ST333S08PFL0P | 518 A, 800 V, SCR, TO-209AE |
| ST333S08PFL1P | 518 A, 800 V, SCR, TO-209AE |
| ST4159FFREQ1 | CRYSTAL OSCILLATOR, CLOCK, 32 MHz - 60 MHz, TTL OUTPUT |
| ST4150AFREQ2 | CRYSTAL OSCILLATOR, CLOCK, 60 MHz - 125 MHz, TTL OUTPUT |
| ST416JFFREQ1 | CRYSTAL OSCILLATOR, CLOCK, 32 MHz - 60 MHz, ACMOS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST333S04PFM0 | 功能描述:SCR 400 Volt 330 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| ST333S04PFM1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR 518A FAST |
| ST333S06PFLO | 制造商:n/a 功能描述:Power Semiconductor |
| ST333S08MFL1P | 功能描述:SCR 800 Volt 330 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| ST333S08PFL0 | 功能描述:SCR 800 Volt 330 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。