參數(shù)資料
型號: ST333C08CFM0
英文描述: Stratix II FPGA 130K FBGA-1020
中文描述: 800V的1435A逆變晶閘管采用TO - 200AB(電子北辰)封裝
文件頁數(shù): 2/9頁
文件大?。?/td> 171K
代理商: ST333C08CFM0
ST333C..C Series
2
Bulletin I25170 rev. B 04/00
www.irf.com
Voltage
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
V
RSM
, maximum
non-repetitive peak voltage
V
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
Type number
04
400
500
08
800
900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency
Units
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
1630
1630
1350
720
50
1420
1390
1090
550
50
2520
2670
2440
1450
50
2260
2330
2120
1220
50
7610
4080
2420
1230
50
6820
3600
2100
1027
50
A
V
DRM
V
DRM
V
DRM
50
50
-
-
-
-
A/
μ
s
°
C
Heatsink temperature
Equivalent values for RC circuit
40
10
/ 0.47μF
55
40
10
/ 0.47μF
55
40
10
/ 0.47μF
55
I
TM
180
o
el
180
o
el
100
μ
s
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current
720 (350)
A
180
°
conduction, half sine wave
@ Heatsink temperature
55 (75)
°
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
1435
DC @ 25
°
C heatsink temperature double side cooled
I
TSM
Max. peak, one half cycle,
11000
t = 10ms
No voltage
non-repetitive surge current
11500
A
t = 8.3ms
reapplied
9250
t = 10ms
100% V
RRM
reapplied
9700
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
605
t = 10ms
No voltage
Initial T
J
= T
J
max
553
t = 8.3ms
reapplied
428
t = 10ms
100% V
RRM
391
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
6050
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
Parameter
ST333C..C
Units
Conditions
On-state Conduction
KA
2
s
ST333C..C
50
相關(guān)PDF資料
PDF描述
ST333C08CFM1 Stratix II FPGA 130K FBGA-1020
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ST333C08LFM0 Stratix II FPGA 180K FBGA-1020
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