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參數(shù)資料
| 型號： | ST333C08CFL0 |
| 英文描述： | Stratix II GX FPGA 90K FPGA-1508 |
| 中文描述： | 800V的1435A逆變晶閘管采用TO - 200AB（電子北辰）封裝 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 171K |
| 代理商： | ST333C08CFL0 |
ST333C..C Series
3
Bulletin I25170 rev. B 04/00
www.irf.com
V
TM
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
slope resistance
Max. peak on-state voltage
1.96
I
TM
= 1810A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
Low level value of forward
r
t
2
High level value of forward
slope resistance
Maximum holding current
I
H
I
L
600
T
J
= 25
°
C, I
T
> 30A
T
J
= 25
°
C, V
A
= 12V, Ra = 6
,
I
G
= 1A
Typical latching current
1000
Parameter
ST333C..C
Units
Conditions
On-state Conduction
0.91
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.93
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
0.58
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.58
(I >
π
x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25
°
C, V
DM
= rated V
DRM
,
I
TM
= 50A DC, t
p
= 1μs
Resistive load, Gate pulse: 10V, 5
source
T
J
= T
J
max,
I
TM
= 550A, commutating di/dt
= 40A/μs
V
R
= 50V, t
p
= 500μs, dv/dt: see table in device code
Switching
Parameter
ST333C..C
Units
Conditions
1000
A/μs
t
d
Typical delay time
1.1
Min
10
Max
30
dv/dt
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
T
= T
max. linear to 80% V
DRM
, higher value
available on request
I
RRM
I
DRM
Parameter
ST333C..C
Units
Conditions
Blocking
500
V/
μ
s
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
I
GM
Maximum peak gate power
60
Maximum average gate power
10
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p
≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
I
GD
V
GD
20
mA
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST333C..C
Units
Conditions
W
T
J
= T
J
max., f = 50Hz, d% = 50
20
5
V
T
J
= T
J
max, t
p
≤
5ms
200
mA
3
V
T
J
= 25
°
C, V
A
= 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
μs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ST333C08CFL1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 720 A |
| ST333C08CFM0 | 功能描述:SCR PHASE CONT 800V 720A E-PUK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> SCR - 單個 系列:- 其它有關(guān)文件:X00619 View All Specifications 產(chǎn)品目錄繪圖:SCR TO-92 Package 標(biāo)準(zhǔn)包裝:1 系列:- SCR 型:靈敏柵極 電壓 - 斷路:600V 電壓 - 柵極觸發(fā)器 (Vgt)（最大）:800mV 電壓 - 導(dǎo)通狀態(tài) (Vtm)（最大）:1.35V 電流 - 導(dǎo)通狀態(tài) (It (AV))（最大）:500mA 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:800mA 電流 - 柵極觸發(fā)電流 (Igt)（最大）:200µA 電流 - 維持(Ih):5mA 電流 - 斷開狀態(tài)（最大）:1µA 電流 - 非重復(fù)電涌，50、60Hz (Itsm):9A，10A 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-226-3、TO-92-3（TO-226AA）成形引線 供應(yīng)商設(shè)備封裝:TO-92-3 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:1554 (CN2011-ZH PDF) 其它名稱:497-9067-1 |
| ST333C08CFM1 | 制造商:Vishay Semiconductors 功能描述:THYRISTOR 1435A 800V TO-200AB |
| ST333C08CFM1PBF | 制造商:International Rectifier 功能描述:THYRISTOR 1435A 800V TO-200AB |
| ST333C08CHK0 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 720 A |
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