參數(shù)資料
型號： ST330C16L0
英文描述： Stratix FPGA 60K FBGA-1020
中文描述： 1600V 650A相控制晶閘管采用TO - 200AC（乙，北辰）封裝
文件頁數(shù)： 2/7頁
文件大?。?/td> 96K
代理商： ST330C16L0
ST330C..L Series
2
Bulletin I25154 rev. C 04/00
www.irf.com
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80%
V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25
°
C
I
TM
= 550A, T
J
= T
J
max, di/dt
= 40A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST330C..L
Units Conditions
Switching
1000
A/μs
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
μs
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
V
RSM
, maximum non-
repetitive peak voltage
V
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
Type number
04
400
500
08
800
900
ST330C..L
12
1200
1300
50
14
1400
1500
16
1600
1700
I
T(AV)
Max. average on-state current
650 (314)
A
180
°
conduction, half sine wave
@ Heatsink temperature
55 (75)
°
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
1230
DC @ 25
°
C heatsink temperature double side cooled
9000
t = 10ms
No voltage
9420
A
t = 8.3ms
reapplied
7570
t = 10ms
100% V
RRM
reapplied
7920
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
405
t = 10ms
No voltage
Initial T
J
= T
J
max.
370
t = 8.3ms
reapplied
287
t = 10ms
100% V
RRM
reapplied
262
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
4050
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.90
V
I
pk
= 1730A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.91
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.57
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.57
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST330C..L
Units Conditions
0.93
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25
°
C, anode supply 12V resistive load
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ST330C16L0L 功能描述:SCR模塊 650 Amp 1600 Volt 1230 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK
ST330C16L0LPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 650 A
ST330C16L0PBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 650 A
ST330C16L1L 功能描述:SCR模塊 650 Amp 1600 Volt 1230 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK
ST330C16L1LPBF 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 650 A
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